Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region

摘要: A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation capping electrically conductive regions the that are separated by region, inhibits material or in region. The can be selectively non-selectively; either case (particularly latter), over subsequently removed, thus ensuring only regions. Silane-based materials, such as silane-based SAMs, used to form layer. (e.g., cobalt alloy, nickel tungsten, tantalum, tantalum nitride), semiconductor material, insulative and using any appropriate process, including conventional deposition processes electroless deposition, chemical vapor physical atomic deposition.