Interconnects with improved TDDB
作者： Wu Ping Liu , Lawrence A. Clevenger , Jing Hui Li
DOI:
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摘要: A method for forming a semiconductor device is presented. substrate prepared with dielectric layer formed thereon provided. first upper etch stop on the layer. The includes material. and are patterned to form an interconnect opening. opening filled conductive material interconnect. have coplanar top surfaces. second over having sufficient adhesion reduce diffusion of
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