High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3
作者： Jin Soo Hwang , Satoru Tanaka , Sohachi Iwai , Yoshinobu Aoyagi , Seeyearl Seong
DOI: 10.1016/S0022-0248(98)00893-8
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摘要: Abstract High quality GaN films of low etch pit density (10 7 cm −2 ) have been prepared by metal organic chemical vapour deposition (MOCVD) on 6H-SiC substrate with Aln buffer layer. The layer was pretreated alternating pulsative supply (APS) trimethyl gallium (TMG) and NH 3 gases. Nitrogen atom is expected to incorporate into the cluster formed APS process. sizes grains at initial stage increased treatment. photoluminescence spectrum resulting 13 K shows sharp near band-edge emission peak 3.47 eV 12 meV FWHM value. PL intensity donor–acceptor transition 3.26 eV reduced decrease defect density.
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Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K Applied Physics Letters. ,vol. 69, pp. 3034- 3036 ,(1996) , 10.1063/1.116830
Kung Wang, Jasprit Singh, Dimitris Pavlidis, Theoretical study of GaN growth: A Monte Carlo approach Journal of Applied Physics. ,vol. 76, pp. 3502- 3510 ,(1994) , 10.1063/1.357479
1 SJ Rosner, EC Carr, MJ Ludowise, G Girolami, HI Erikson, None, CORRELATION OF CATHODOLUMINESCENCE INHOMOGENEITY WITH MICROSTRUCTURAL DEFECTS IN EPITAXIAL GAN GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION Applied Physics Letters. ,vol. 70, pp. 420- 422 ,(1997) , 10.1063/1.118322
J.T. Yates, A. Hübner, S.R. Lucas, W.D. Partlow, J. Schaefer, W.J. Choyke, Activation of the Ga-CH3 bond using atomic hydrogen - a possible route to III–V semiconductors films with low carbon levels Applied Surface Science. pp. 180- 192 ,(1994) , 10.1016/0169-4332(94)90215-1
O. Lagerstedt, B. Monemar, Luminescence in epitaxial GaN : Cd Journal of Applied Physics. ,vol. 45, pp. 2266- 2272 ,(1974) , 10.1063/1.1663574
Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi, Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC Journal of Crystal Growth. ,vol. 170, pp. 329- 334 ,(1997) , 10.1016/S0022-0248(96)00611-2
Lisa Sugiura, Dislocation motion in GaN light-emitting devices and its effect on device lifetime Journal of Applied Physics. ,vol. 81, pp. 1633- 1638 ,(1997) , 10.1063/1.364018
S. Fischer, C. Wetzel, E. E. Haller, B. K. Meyer, On p-type doping in GaN—acceptor binding energies Applied Physics Letters. ,vol. 67, pp. 1298- 1300 ,(1995) , 10.1063/1.114403
F. A. Ponce, B. S. Krusor, J. S. Major, W. E. Plano, D. F. Welch, Microstructure of GaN epitaxy on SiC using AlN buffer layers Applied Physics Letters. ,vol. 67, pp. 410- 412 ,(1995) , 10.1063/1.114645
Mohammad Rezaul Huque Khan, Yoshio Ohshita, Nobuhiko Sawaki, Isamu Akasaki, None, Effect of Si on photoluminescence of GaN Solid State Communications. ,vol. 57, pp. 405- 409 ,(1986) , 10.1016/0038-1098(86)90479-5