Activation of the Ga-CH3 bond using atomic hydrogen - a possible route to III–V semiconductors films with low carbon levels

摘要: Abstract A new reaction has been discovered in which the Ga-CH 3 bond may be broken by action of atomic H leading to removal CH groups. This process occurs at temperatures as low 100 K with zero activation energy. concept is employed produce GaN using electron beam dissociation adsorbed NH H. then interacts neighboring bonds, eliminating group. It shown that a pattern deposited spatial region impact. The produced less contaminated carbon than thin films grown conventional MOCVD methods. These findings probably apply general way production III–V compound semiconductor from Group III metal alkyls and V hydrides.