Effect of the electron-momentum distribution on the shape of the Compton edge of Si(Li) detectors
作者： J. Felsteiner , S. Kahane , B. Rosner
DOI: 10.1016/0029-554X(74)90711-3
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摘要: Abstract The effect of the momentum distribution electrons in silicon on shape Compton edge Si(Li) detectors is investigated. A fairly good agreement found between observed and calculations using non-relativistic differential cross-section. possibility calibration high-resolution solid-state by means discussed. Such calibrations may be useful cases where photoelectric cross-section very small.
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