Multiple etch method for fabricating split gate field effect transistor (FET) device
作者： Chen-Yuan Hsu , Yu-I Wang , Bor-Wen Chan , Hun-Jan Tao
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摘要: Within a method for fabricating split gate field effect transistor (FET) device there is employed two step etch forming floating electrode. the patterned first masking layer and blanket second to assist in providing electrode with sharply pointed tip within at least either an upper edge of or sidewall The provides enhanced data erasure performance.
lens.org 参考文章(11)
Seiki Ogura, Double sidewall short channel split gate flash memory ,(2000)
Mong-Song Liang, Ruei-Ling Lin, Di-Son Kuo, Ching-Hsiang Hsu, Multi-level, split-gate, flash memory cell and method of manufacture thereof ,(1996)
Hung-Cheng Sung, Chia-Ta Hsieh, Yai-Fen Lin, Di-Son Kuo, Poly tip formation and self-align source process for split-gate flash cell ,(2000)
Thomas Chang, Chih-Hsien Wang, Min-Liang Chen, Method of making EEPROM cell device with polyspacer floating gate ,(1996)
Chia-Ta Hsieh, Di-Son Kuo, Jong Chen, Chrong-Jung Lin, Method for forming vertical channels in split-gate flash memory cell ,(1997)
Mark A. Holler, Been-Jon Woo, Method for improving erase characteristics of buried bit line flash EPROM devices without using sacrificial oxide growth and removal steps ,(1991)
Bin-Shing Chen, Method of fabricating self-aligned split gate flash memory cell ,(1998)
Hung-Cheng Sung, Chia-Ta Hsieh, Yai-Fen Lin, Di-Son Kuo, Chang-Song Lin, Jung-Ke Yeh, Method to fabricate sharp tip of poly in split gate flash ,(1999)
Hung-Cheng Sung, Chia-Ta Hsieh, Yai-Fen Lin, Di-Son Kuo, Source side injection programming and tip erasing P-channel split gate flash memory cell ,(1999)
Stephen Frank Geissler, Method of forming eeprom cell with channel hot electron programming ,(1997)