System and method of forming a split-gate flash memory cell

作者: Michael Wu , David Ho , Eugene Chu , Eric Chao , Fei Chen

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摘要: A system and method for forming a split-gate flash memory cell is disclosed. In one example, semiconductor device includes: supplying substrate; floating gate with alternate etch passivation steps; control proximate to partially overlying the gate.

参考文章(2)
Chen-Yuan Hsu, Yu-I Wang, Bor-Wen Chan, Hun-Jan Tao, Multiple etch method for fabricating split gate field effect transistor (FET) device ,(2002)
Hui-Chen Chu, Wen-Cheng Chien, Multi-layer spacer technology for flash EEPROM ,(2000)