Multi-film stack etching with polymer passivation of an overlying etched layer
作者： Jinhan Choi , Anisul H. Khan , Sunil Srinivasan
DOI:
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摘要: A method and apparatus for plasma etching a workpiece, such as semiconductor wafer, including thin film stack having top disposed over bottom with an intervening middle there between. Etch selectivity between the films may be low 1:1 2:1 first carbon-lean gas chemistry is used to etch through film, second etched by alternating depositing polymer passivation on using carbon-rich of third chemistry, which same chemistry.
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