Method for plasma etching using periodic modulation of gas chemistry
作者： Eric A. Hudson , James V. Tietz
DOI:
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摘要: A method for etching a layer over substrate is provided. gas-modulated cyclic process performed more than three cycles. Each cycle comprises performing protective forming phase using first gas chemistry with deposition chemistry, which in about 0.0055 to 7 seconds each and an the feature through etch mask second reactive 0.005 14 cycle. The providing plasma from gas.
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