Double sidewall short channel split gate flash memory
作者： Seiki Ogura
DOI:
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摘要: An electrically programmable read only memory device which has efficiency of electron injection from channel to floating gate is provided. This cell includes a control and between source drain regions. The region under the extremely small enhanced mode N region. Therefore, this completely depleted by program voltage. precisely defined side wall spacer technique. Also, accurately difference polysilicon first spacer.
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