Asymmetric Current Flow in a Native Oxide/Indium Selenide Heterostructure
作者： SI Drapak , ZD Kovalyuk , None
DOI: 10.1134/S0020168511110045
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摘要: This paper examines for the first time current-voltage behavior of native oxide/InSe heterostructures with oxide grown at room temperature on a cleaved (0001) InSe surface and analyzes processes that determine shape their curves. The is shown to be an insulator electric conductivity ∼10–11 S/cm relative static dielectric permittivity 10.37 temperature. Low bias voltages lead monopolar carrier injection into layer. At sufficiently high voltages, thermal field trap ionization (Poole-Frenkel effect) thermionic emission occur. asymmetry may due different concentrations difference in energy distribution between near-surface region film oxide/semiconductor substrate interface.
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