Integrated compact mems device with deep trench contacts

摘要: A compact MEMS motion sensor device is provided, including a CMOS substrate layer, with plural anchor posts having an isolation oxide layer surrounding conductive layer. On one side of the further includes field (FOX) first set and second implant doped silicon areas, polysilicon embedded metal layers interleaved via hole layers, Nitride deposition under bump (UBM) plurality solder spheres. other present invention backside interconnect bonding compound eutectic cap