Evidence for narrow mid-gap defect band in amorphous selenium from low-temperature anomalous electrical properties
作者： Sunil Thomas , Naser Qamhieh , Saleh T. Mahmoud , Guy J. Adriaenssens
DOI: 10.1016/J.PHYSB.2020.412139
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摘要: Abstract Electrical properties of amorphous selenium films (~2.1 μm thick) were investigated at different temperatures between 225 K and room temperature. The samples prepared using thermal evaporation method. capacitance conductance measured analyzed to study their changes with temperature voltage. An anomalous peak is found in the conductance- capacitance-temperature curves ~245 K. phenomenon can be linked distribution defect states near mid-gap change ‘effective transport energy’ which takes place.
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