作者: Kyeong-Jae Byeon , Eun-Ju Hong , Hyoungwon Park , Ki-Yeon Yang , Jong Hyeob Baek
DOI: 10.1088/0268-1242/24/10/105004
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摘要: The indium tin oxide (ITO) transparent electrode layer on green and blue light-emitting diodes (LEDs) was patterned with various-sized periodic hole arrays, size ranging from 300 nm to 380 nm, using thermal nanoimprint lithography inductively coupled plasma (ICP) etching processes. imprinted resin used as a mask etch resistance of the adjusted in order control tapered enlarged profile ITO layer, since can improve light extraction efficiency LED by prominent scatterings. Photoluminescence intensity InGaN multi-quantum wells for structure showed that up 4.6 times stronger emission exhibited electrode, compared identical sample an un-patterned blanket layer. An electroluminescence (EL) witha increased 23%