Fabrication of indium tin oxide bump/pit structures on GaN-based light emitting diodes

摘要: In the past several decades, significant progress has been made to improve performance of semiconducting light emitting diodes (LEDs), which resulted in a wide number applications for LEDs information and energy fields. However, extraction efficiency is limited due remarkable total internal reflection on device's surface large refractive index GaN indium tin oxides (ITO). this work, ITO bump pit patterns were fabricated LED using an ion beam etching method via metal or resist masks, respectively. By changing incident angle material effects faceting redeposition can be properly controlled, resulting well-controlled manipulation shape bump/pit structures. altering time, over-etched structures have much smoother compared with under-etched/in-etched These could potential enhancement optical devices.