MOSFET structure and forming method thereof
作者： Lin Huan Just , Fu Ching Feng , Chang Hui Cheng , Ko Chih Hsin , Lee Chun Hung
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摘要: A method of forming a MOSFET structure is provided. In the method, an epitaxial layer formed. cap formed above layer. first trench protection deposited within trench. The material selected from group consisting germanium and silicon-germanium.
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