Hard mask etch stop for tall fins
作者： Tahir Ghani , Bernhard Ben Sell , Ritesh Jhaveri
DOI:
关键词:
摘要: A hard mask etch stop is formed on the top surface of tall fins to preserve fin height and protect from damage during etching steps transistor fabrication process. In an embodiment, using a dual system, wherein layer over substrate, second used pattern with fin. The removed, while remains subsequent steps.
lens.org 参考文章(9)
Sang Lee, Jung Cheong, Choi, Method for forming semiconductor device ,(2010)
Mitsuru Narihiro, Semiconductor device and manufacturing process therefor ,(2005)
Katherine Lynn Saenger, Michael Guillorn, Wilfried Ernst-August Haensch, Josephine Bea Chang, Fin field effect transistor devices with self-aligned source and drain regions ,(2009)
Mark L. Doczy, Justin K. Brask, Brian S. Doyle, Robert S. Chau, Uday Shah, Suman Datta, Jack T. Kavalieros, Matthew V. Metz, Process for integrating planar and non-planar cmos transistors on a bulk substrate and article made thereby ,(2006)
Jeffrey Sleight, Michael A. Guillorn, Josephine Chang, Paul Chang, Single Gate Inverter Nanowire Mesh ,(2009)
Sung-dae Suk, Sung-young Lee, Sung-min Kim, Dong-won Kim, MOS field effect transistor having plurality of channels and method of fabricating the same ,(2006)
Witold Maszara, Robert J. Miller, Method of manufacturing a finned semiconductor device structure ,(2010)
Ching-Nan Hsiao, Ying-Cheng Chuang, Finfet transistor process ,(2005)
Dureseti Chidambarrao, Kenneth T. Settlemyer, Jochen C. Beintner, Yujun Li, Pull-back method of forming fins in FinFETs ,(2003)