MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
作者： Chin-i Liao , Chin-cheng Chien
DOI:
关键词: Epitaxy 、 Semiconductor device 、 Boron 、 Layer (electronics) 、 Doping 、 Materials science 、 Substrate (electronics) 、 Optoelectronics
摘要: A manufacturing method of a semiconductor device is provided. The includes at least the following steps. gate structure formed on substrate. An epitaxial substrate, wherein comprises SiGe, and Ge concentration in equal to or higher than 45%. first cap layer structure, Si. doped with boron for forming flat top surface layer.
lens.org 参考文章(6)
Bruce B. Doris, Pranita Kulkarni, Kangguo Cheng, Ghavam Shahidi, Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation ,(2009)
Ling-Yen Yeh, Ming-Hua Yu, Tze-Liang Lee, Source/Drain Strained Layers ,(2007)
Yung Fu Chong, Judson Robert Holt, Zhijiong Luo, Method to control source/drain stressor profiles for stress engineering ,(2011)
Chien-Hao Chen, Shih-Chang Chen, Pang-Yen Tsai, Chie-Chien Chang, Tze-Liang Lee, MOSFET Device With Localized Stressor ,(2008)
Kevin McStay, Dae-Gyu Park, Jeffrey B. Johnson, Judson R. Holt, Jophy S. Koshy, Frank B. Yang, Thomas S. Kanarsky, Kevin K. Chan, Brian J. Greene, Johan W. Weijtmans, Transistor having V-shaped embedded stressor ,(2010)
Kuan-Yu Chen, Hsueh-Chang Sung, Tsz-Mei Kwok, Hsien-Hsin Lin, Method of manufacturing strained source/drain structures ,(2011)