Structure and method to make strained FinFET with improved junction capacitance and low leakage
作者： Ali Khakifirooz , Alexander Reznicek , Bruce B. Doris , Darsen D. Lu , Kangguo Cheng
DOI:
关键词:
摘要: A method of forming a semiconductor device that includes gate structure on fin and etching the source drain region portions to provide recessed surface. first layer is formed surface doped conductivity type. leakage barrier layer. second The
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