Gain-clamped dual-stage L-band EDFA by using backward C-band ASE
作者： Yanli Jin , Qingying Dou , Yange Liu , Jianguo Liu , Lingling Xu
DOI: 10.1016/J.OPTCOM.2006.05.006
关键词:
摘要: Abstract A dual-stage L-band gain-clamped erbium-doped fiber amplifier (GC-EDFA) by using backward C-band amplified spontaneous emission (ASE) is proposed. Compared with other similar GC-EDFAs, the proposed structure has higher and flatter clamped gain in because of its optimal pump power EDF length. The flatness from 1570 nm to 1600 nm arrives 0.77 dB, bandwidth 3 dB more than 35 nm maximal input signal −15 dBm.
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