Faulty field evaporation at di-vacancies in {222} tungsten

摘要: Abstract Faulty field evaporation sequences, creating artefact vacancies, were observed during field-ion microscopy of tungsten specimens which had previously been irradiated in situ with 180–230 keV Xe+ ions at 80 K. Such sequences for atoms {222} planes neighbours to 〈111〉 di-vacancies. The faulty gave rise a tri- or quadri-vacancy contrast instead the expected di-vacancy contrast. This effect can be explained by influence reduced atomic binding energy on probability evaporation.