Ge profile from the growth of SiGe buried layers by molecular beam epitaxy
作者： D. J. Godbey , M. G. Ancona
DOI: 10.1063/1.108272
关键词:
摘要: X‐ray photoelectron spectroscopy measurements were obtained and interpreted by a kinetic simulation to determine the germanium concentration profile of thin Si/SiGe heterostructures grown at 500 °C using elemental source molecular beam epitaxy. The primary finding is that there are significant segregation effects in these commonly structures which affect both ‘‘leading’’ ‘‘trailing’’ interfaces. Upon opening shutter, surface monolayer must be built up composition greater than 96% before deposited alloy layer equal flux for Ge ratio 0.3. This buildup causes depletion leading interface. termination flux, incorporation rich into growing silicon cap corresponding degradation trailing
harvard.edu
scitation.org
aip.org 
sci-hub.se 参考文章(13)
E. T. Croke, Observation of a (2×8) surface reconstruction on Si1−xGex alloys grown on (100) Si by molecular-beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 9, pp. 2301- 2306 ,(1991) , 10.1116/1.585737
D.J. Gravesteijn, P.C. Zalm, G.F.A. van de Walle, C.J. Vriezema, A.A. van Gorkum, L.J. van Ijzendoorn, Ge Segregation during molecular beam epitaxial growth of Si1−xGex/Si layers Thin Solid Films. ,vol. 183, pp. 191- 196 ,(1989) , 10.1016/0040-6090(89)90444-6
C.A. King, J.L. Hoyt, J.F. Gibbons, Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors IEEE Transactions on Electron Devices. ,vol. 36, pp. 2093- 2104 ,(1989) , 10.1109/16.40925
E. Glaser, J. Trombetta, T. Kennedy, S. Prokes, O. Glembocki, K. Wang, C. Chern, Detection of magnetic resonance on photoluminescence from a Si/Si1-xGex strained-layer superlattice. Physical Review Letters. ,vol. 65, pp. 1247- 1250 ,(1990) , 10.1103/PHYSREVLETT.65.1247
S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki, R. Ito, Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth Applied Physics Letters. ,vol. 59, pp. 2103- 2105 ,(1991) , 10.1063/1.106412
D. J. Godbey, M. E. Twigg, H. L. Hughes, L. J. Palkuti, P. Leonov, J. J. Wang, Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop Journal of The Electrochemical Society. ,vol. 137, pp. 3219- 3223 ,(1990) , 10.1149/1.2086190
J. J. Harris, D. E. Ashenford, C. T. Foxon, P. J. Dobson, B. A. Joyce, Kinetic limitations to surface segregation during MBE growth of III–V compounds: Sn in GaAs Applied Physics A. ,vol. 33, pp. 87- 92 ,(1984) , 10.1007/BF00617613
H. Jorke, Surface segregation of Sb on Si(100) during molecular beam epitaxy growth Surface Science. ,vol. 193, pp. 569- 578 ,(1988) , 10.1016/0039-6028(88)90454-2
J.‐P. Noël, N. L. Rowell, D. C. Houghton, D. D. Perovic, Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloys Applied Physics Letters. ,vol. 57, pp. 1037- 1039 ,(1990) , 10.1063/1.103558
Yusuke Ota, Silicon molecular beam epitaxy Thin Solid Films. ,vol. 106, pp. 1- 136 ,(1983) , 10.1016/0040-6090(83)90180-3