Dispersion-related description of temperature dependencies of band gaps in semiconductors
作者： Roland Pässler
DOI: 10.1103/PHYSREVB.66.085201
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摘要: vanishing dispersion, D>0, up to the limiting regime of extremely large D 5/4 for Varshni’s model is fundamental reason usual inadequacy ~large degree arbitrariness! parameter values resulting from conventional fittings E(T) data sets using formula.
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