Appropriate analytical description of the temperature dependence of exciton peak positions in GaAs/AlxGa1−xAs multiple quantum wells and the Γ8v−Γ6c gap of GaAs

摘要: We have performed a detailed numerical reinvestigation of the photoluminescence peak position data given by G. Oelgart et al. [J. Appl. Phys. 74, 2742 (1993)] for ground state heavy-and light-hole excitons in high quality molecular beam epitaxially grown GaAs/Al0.3Ga0.7As multiple quantum well structure. Appropriate fittings measured temperature dependencies exciton positions from 4.2 up to 340 K are shown be provided novel analytical four-parameter representation developed recently one authors gap shrinkage effect semiconductors. The magnitude limiting (T→∞) coefficient, α=0.475 meV/K, and associated average phonon temperature, Θ=222.4 K, been determined. Characteristic qualitative differences basic deficiencies earlier three-parameter models discussed illustrated numerically comparisons with various experimental observations low temperatures.