Thermodynamic properties of the native oxide-Hg1-xZnxTe interface
作者： Yu V Medvedev , N N Berchenko
DOI: 10.1088/0268-1242/9/12/015
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摘要: The solid phase part of the Hg-Zn-Te-O equilibrium diagram has been estimated from thermodynamic calculations. It was found that, contrary to other A2B6 tellurides, ZnTe possesses a preferable oxidation metal, leaving elemental tellurium at native oxide-ZnTe interface. is shown as result, electrical properties and thermal stability oxide-Hg1-xZnxTe interface are superior those oxide-Hg1-xCdxTe Hence, in terms properties, Hg1-xZnxTe seems be better material for infrared device applications. also demonstrated that semiconductor compound qualitatively determines oxide-semiconductor
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