摘要: The formation of anodic oxides on HgZnTe has been studied and characterized by XPS technique. physical properties anodized p-type layers have investigated the differential Hall effect, photoconductivity, photoluminescence measurements. It was found that tendency to form surface inversion anodization is considerably lower than for HgCdTe. There a considerable increase in effective lifetime values intensities. In addition, significant differences between voltametric analysis curves HgCdTe were observed. results are discussed view bonding characteristics two materials.
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