Retention Characteristics of Bi3.25La0.75Ti3O12Thin Films

作者: B. S. Kang , J.-G. Yoon , T. K. Song , S. Seo , Y. W. So

DOI: 10.1143/JJAP.41.5281

关键词:

摘要: … In conclusion, the polarization retention characteristics of ferroelectric Bi3:25La0:75Ti3O12 (BLT) thin films fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition have …

参考文章(7)
J. W. Hong, W. Jo, D. C. Kim, S. M. Cho, H. J. Nam, H. M. Lee, J. U. Bu, Nanoscale investigation of domain retention in preferentially oriented PbZr0.53Ti0.47O3 thin films on Pt and on LaNiO3 Applied Physics Letters. ,vol. 75, pp. 3183- 3185 ,(1999) , 10.1063/1.125271
Yasuhiro Shimada, Masamichi Azuma, Keisaku Nakao, Shigeo Chaya, Nobuyuki Moriwaki, Tatsuo Otsuki, Retention Characteristics of a Ferroelectric Memory Based on SrBi2(Ta, Nb)2O9 Japanese Journal of Applied Physics. ,vol. 36, pp. 5912- 5916 ,(1997) , 10.1143/JJAP.36.5912
Z. G. Zhang, Y. N. Wang, J. S. Zhu, F. Yan, X. M. Lu, H. M. Shen, J. S. Liu, Retention characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition Applied Physics Letters. ,vol. 73, pp. 3674- 3676 ,(1998) , 10.1063/1.122859
V. V. Gladkii, V. A. Kirikov, E. S. Ivanova, S. V. Nekhlyudov, Two forms of polarization relaxation in polydomain ferroelectrics in an electric field Physics of the Solid State. ,vol. 41, pp. 447- 452 ,(1999) , 10.1134/1.1130800
S. Aggarwal, A. M. Dhote, R. Ramesh, W. L. Warren, G. E. Pike, D. Dimos, M. V. Raymond, B. A. Tuttle, J. T. Evans, Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes Applied Physics Letters. ,vol. 69, pp. 2540- 2542 ,(1996) , 10.1063/1.117732
Keisaku Nakao, Yuji Judai, Masamichi Azuma, Yasuhiro Shimada, Tatsuo Otsuki, Voltage Shift Effect on Retention Failure in Ferroelectric Memories Japanese Journal of Applied Physics. ,vol. 37, pp. 5203- 5206 ,(1998) , 10.1143/JJAP.37.5203
A. Gruverman, H. Tokumoto, A. S. Prakash, S. Aggarwal, B. Yang, M. Wuttig, R. Ramesh, O. Auciello, T. Venkatesan, Nanoscale imaging of domain dynamics and retention in ferroelectric thin films Applied Physics Letters. ,vol. 71, pp. 3492- 3494 ,(1997) , 10.1063/1.120369