Current-in-Plane Giant Magnetoresistance Sensor Using a Thin Cu Spacer and Dual Nano-Oxide Layers With a ${\rm DR}$ Greater Than $20$ Ohms/sq.
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摘要: The magnetoresistance (MR) of the current-in-plane spin-valve, which is currently utilized as readback sensor in majority hard disk drives, has reached a maximum MR DR/Rmin.~20% and DRsheet~4 Omega/sq. A new film stack will be introduced here that utilizes trilayer (CoFe\Cu\CoFe) where Cu interlayer very thin (~10 Aring) to enhance thickness chosen such ferromagnetic Neel coupling antiferromagnetic Ruderman-Kittel-Kasuya-Yosida (RKKY) between CoFe layers partially cancel one another, maximize sensitivity. By changing thickness, overall was adjusted from about -0.05 erg/cm2 -0.4 while keeping large. Nano-oxide (NOLs) are also incorporated below above MR. An example this NiFeCr 20 Aring/CoFeO 10 Aring/CoFe 15 Aring/Cu 10.5 Aring/AlO 30 Aring referred CIP-3L. With combination spacer, NOLs minimal additional shunt current around (no material no pinned layers), deposited sheet films with an DR/R >25% DR/sq. >20 were achieved. This paper shows optimization stack, thicknesses, NOL material, oxidation process, adjustability exchange repeatability deposition
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