Temperature dependence of magnetoresistive properties in bottom spin valve films employing very thin Cu spacers

摘要: Abstract Temperature dependence of magnetoresistive properties in bottom spin valve films having very thin Cu spacers are reported. NiFeCr55 A/NiFe10 A/IrMn70 A/CoFetA/Ru4 A/CoFe(t+3)A/Cu/CoFe tA/NiFe10 A/Ta50 A were deposited using a DC magnetron sputter deposition system. Magnetoresistance (MR) ratio reached maximum 13.5% and 11.9% at the thickness 10.4 A, when CoFe layers t was 20 10 A, respectively. Unlike top valves reported earlier, dip MR not observed interlayer coupling between free layer reference became zero. Sheet resistance change (DRs) 4.22 Ω/□ spacer 10 A 10 A. dependences ratio, DRs, field (Hi), sensitivity showed mostly monotonic decrease as temperature increased up to 200 °C. It turns out that DRs for film 10.4 A 200 °C larger than 20 A 40 °C. This suggests high output voltage sensor made even operating temperature. These could be utilized small devices where is dominated by demagnetizing fields.