Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs
作者： A. Kinoshita , T. Kinoshita , Y. Nishi , K. Uchida , S. Toriyama
关键词:
摘要: The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated terms of injection velocity, vinj. It found that vinj enhancement associated with the velocity overshoot enhances current drivability DSS, addition to reduction parasitic resistance. A physical-based model newly developed explain behavior reproduced experimental data very well. Moreover, a novel type DSS FinFET take full advantage proposed demonstrated as primary study.
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