Method of forming fine pattern, and developer

摘要: A method of forming a fine pattern, including: phase separation step in which layer containing block copolymer having plurality blocks bonded is formed on substrate, and then the heated for layer; decomposition at least portion one constituting decomposed; selective removal immersed developing solution to selectively remove decomposed form nano structure; an etching substrate subjected by using structure as mask; main component organic solvent SP value 7.5 11.5 (cal/cm 3 ) 1/2 , vapor pressure less than 2.1 kPa 25° C., or benzene that may be substituted alkyl group, alkoxy halogen atom, further contains metal alkoxide.