Neuro‐space mapping modeling approach for trapping and self‐heating effects on GaAs and GaN devices

作者: Taj-eddin Elhamadi , Mohamed Boussouis , Naima Amar Touhami , Mohammed Lamsalli

DOI: 10.1002/MMCE.21106

关键词:

摘要:

参考文章(21)
Zlatica Marinković, Giovanni Crupi, Alina Caddemi, Gustavo Avolio, Antonio Raffo, Vera Marković, Giorgio Vannini, Dominique M. M.-P. Schreurs, Neural approach for temperature-dependent modeling of GaN HEMTs International Journal of Numerical Modelling-electronic Networks Devices and Fields. ,vol. 28, pp. 359- 370 ,(2015) , 10.1002/JNM.2011
G. Dambrine, A. Cappy, F. Heliodore, E. Playez, A new method for determining the FET small-signal equivalent circuit IEEE Transactions on Microwave Theory and Techniques. ,vol. 36, pp. 1151- 1159 ,(1988) , 10.1109/22.3650
M. Simsek, Q.J. Zhang, H. Kabir, Y. Cao, N.S. Sengor, The recent developments in knowledge based neural modeling international conference on conceptual structures. ,vol. 1, pp. 1321- 1330 ,(2010) , 10.1016/J.PROCS.2010.04.147
Lin-Sheng Liu, An improved empirical large-signal model for the GaAs- and GaN-based HEMTs International Journal of RF and Microwave Computer-Aided Engineering. ,vol. 21, pp. 343- 352 ,(2011) , 10.1002/MMCE.20523
A Caddemi, G Crupi, N Donato, A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs Microelectronics Journal. ,vol. 35, pp. 431- 436 ,(2004) , 10.1016/J.MEJO.2004.01.002
M. Hayati, B. Akhlaghi, An extraction technique for small signal intrinsic parameters of HEMTs based on artificial neural networks Aeu-international Journal of Electronics and Communications. ,vol. 67, pp. 123- 129 ,(2013) , 10.1016/J.AEUE.2012.07.012
Anwar Jarndal, Pouya Aflaki, Renato Negra, Ammar B. Kouki, Fadhel M. Ghannouchi, Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design International Journal of Rf and Microwave Computer-aided Engineering. ,vol. 21, pp. 45- 51 ,(2011) , 10.1002/MMCE.20485
Dominique Schreurs, Jan Verspecht, Large-signal modelling and measuring go hand-in-hand: Accurate alternatives to indirect S-parameter methods (invited paper) International Journal of Rf and Microwave Computer-aided Engineering. ,vol. 10, pp. 6- 18 ,(2000) , 10.1002/(SICI)1099-047X(200001)10:1<6::AID-MMCE3>3.0.CO;2-H
Anwar Jarndal, Genetic algorithm‐based neural‐network modeling approach applied to AlGaN/GaN devices International Journal of Rf and Microwave Computer-aided Engineering. ,vol. 23, pp. 149- 156 ,(2013) , 10.1002/MMCE.20660
A. Santarelli, F. Filicori, G. Vannini, P. Rinaldi, ‘Backgating’ model including self-heating for low-frequency dispersive effects in III-V FETs Electronics Letters. ,vol. 34, pp. 1974- 1976 ,(1998) , 10.1049/EL:19981351