Scalable synthesis of layer-controlled WS2 and MoS2 sheets by sulfurization of thin metal films

摘要: Transition metal dichalcogenides (TMDs) have emerged as exciting 2D materials beyond graphene due to their promising applications in the field of electronics and optoelectronics. Hence, ability produce controllable uniformly thick TMD sheets over a large area is utmost important for large-scale applications. Here, facile method synthesizing large-area, layer-controlled WS2, MoS2 by sulfurization corresponding thin films reported. A film, which deposited magnetron sputtering method, can be adjusted produce, with great control, desired sheet thickness down monolayer. Various characterization techniques, such Raman, photoluminescence, transmission electron microscopy, were used evaluate grown films. The results confirmed some exotic properties TMDs dependent band-gap transition (indirect direct band gap) Raman shift. Devices made directly on as-grown film showed modest mobility, ranging from 0.005 0.01 cm2 V−1s−1. Our synthesis simple could also synthesize other TMDs.