Oxidation Behavior of Porous Silicon Carbide Ceramics under Water Vapor below 1000°C and Their Microstructural Characterization

作者: Manabu FUKUSHIMA , You ZHOU , Yu-ichi YOSHIZAWA , Kiyoshi HIRAO

DOI: 10.2109/JCERSJ.114.1155

关键词:

摘要: The water vapor oxidation behavior below 1000°C for porous silicon carbide ceramics with and without additive alumina was investigated. relationship between the microstructure of SiC examined. varied microstructures, such as pore size particle were found to affect SiC. showed a good stability vapor. This due large particles pores in undoped In contrast, after microstructural changes increase size, disappearance fine particles, because composed small pores.

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