Back-to-back metal/semiconductor/metal (MSM) Schottky diode
作者： Sheng Teng Hsu , David R. Evans , Tingkai Li
DOI:
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摘要: A method is provided for forming a metal/semiconductor/metal (MSM) back-to-back Schottky diode from silicon (Si) semiconductor. The deposits Si semiconductor layer between bottom electrode and top electrode, forms MSM having threshold voltage, breakdown on/off current ratio. able to modify the ratio of in response controlling thickness. Generally, both voltage are increased increasing With respect ratio, there an optimal form amorphous (a-Si) polycrystalline (polySi) using either chemical vapor deposition (CVD) or DC sputtering. can be doped with Group V donor material, which decreases increases voltage.
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