Thermal stability and decomposition of the HfO2-Al2O3 laminate system
作者： Hyo Sik Chang , Hyunsang Hwang , Mann-Ho Cho , Dae Won Moon , Seok Joo Doh
DOI: 10.1063/1.1637955
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摘要: The thermal stability of the HfO2–Al2O3 laminate gate stack grown by atomic layer chemical vapor deposition was investigated using medium-energy ion scattering spectroscopy and high-resolution x-ray photoelectron spectroscopy. structure maintained up to 800 °C under ultrahigh vacuum conditions, while it drastically degraded at 850 °C, resulting in silicide formation on film surface. Dissociated oxygen Hf–Al-oxide preferentially diffuses out through desorbing Volatile SiO species Al–O components desorb sample surface, HfO2 contributes Hf
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