Method for manufacturing a silicon sensor and a silicon sensor
作者： Heikki Kuisma , Risto Mutikainen , Juha Lahdenperä
DOI:
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摘要: The invention relates to a method for manufacturing silicon sensor structure and sensor. According the method, into single-crystal wafer (10) is formed by etched opening at least one spring element configuration (7) seismic mass (8) connected said (7). invention, openings trenches extending through depth of are fabricated dry etch methods, process used controlling constant based on wet methods.
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