Wafer-based ion traps
作者： Stanley Pau , Chien-Shing Pai
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摘要: An apparatus for an ion trap includes a semiconductor or dielectric wafer with front and back surfaces, sequence of alternating conductive layers formed over said surface, bottom layer. The top middle layers, wherein the layer is closer to than substantially right cylindrical cavity that crosses width cap respective first second ends cavity. hole forms access port via through wafer. provides another surface thicker layers.
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