Through-substrate vias formed by bottom-up electroplating
作者： Robert Mihailovich , Alexandros Papavasiliou , Adam Young , Jeff Denatale
DOI:
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摘要: A method of forming void-free, high aspect ratio through-substrate vias by “bottom-up” electroplating. In one embodiment, the requires providing a substrate, dielectric layer on substrate's bottom side, at least perforation through layer, via hole substrate from its top side to and over perforations, an isolation sidewalls hole, metal seed electroplating such that all perforations are plugged, up plugs fill hole.
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