作者: M. Diani , J.L. Bischoff , L. Kubler , D. Bolmont
DOI: 10.1016/0169-4332(93)90239-8
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摘要: Nanometric SiC overlayer synthesis has been performed via a microwave electron cyclotron resonance (ECR) H2 plasma activating CH4 molecules on Si(001) substrates whose temperatures (Ts) expanded from room temperature to 850°C. The films were characterized in situ by angularly resolved photoemission techniques. In addition the Ts dependence of growth kinetics obtained conventional X-ray photoelectron spectroscopy (XPS) measurements, diffraction (XPD) is used for first time show appearance textured β- or 3C-SiC(001)∥Si(001) above 800°C. To this end structured polar scans C 1s and Si 2p carbide intensities are presented two (100) (110) high-symmetry planes compared corresponding substrate signatures. These data relevant XPD investigation binary compound with well differentiated diffusers such as atoms identical environments under test spite which patterns obtained.