Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon

摘要: Abstract Recent advances in real-time and spectroscopic ellipsometry characterization of vapor-deposited thin film diamond, diamond-like carbon, their synthesis are reviewed. Examples presented which ellipsometric techniques have led to insights into growth mechanisms structure that would been difficult elicit by other methods. The determination the bulk interface optical properties films real time application obtain reproducibly tailored interfaces demonstrated. Real-time has also used survey preparation parameter space establish conditions lead sustained or etching. Spectroscopic measurements surface, bulk, assisted chemical vapor deposited diamond will be discussed. Ellipsometry coupled with preferential etching can determine thickness evolution carbide layers formed on substrate before nucleation. For microwave plasma deposition c-Si at 980°C, SiC is 40 70 A present all Si substrates studied.