作者: Walter A. Yarbrough
DOI: 10.1016/B978-0-444-89162-4.50009-9
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摘要: Abstract Many applications have been suggested for the emerging technology of CVD diamond and many are dependent upon achieving specific microstructures or other objectives such as good adhesion, surface smoothness, high levels crystallographic perfection single crystal growth. Some these achieved, e.g. optically smooth nanocrystalline coatings, however others remain elusive, large area heteroepitaxial It is well known that highest nucleation densities routinely achieved by simple expedient polishing otherwise abrading substrate with powder, previously depositing carbon precursors on to be coated it has nucleates preferentially carbide surfaces. The careful analysis polished silicon suggests principal sites those covered a disordered formation itself not important. Various reaction mechanisms models suggested, concentrating nature additive specie its gas phase chemistry. Two most commonly discussed based acetylene methyl radical experimental data supporting hypothesis reviewed. dominant growth axis conditions, rate determining step creation site low index [110]. A mechanism along this proposed.