Nucleation and growth phenomena in chemically vapor-deposited diamond coatings

摘要: Abstract The deposition of crystalline diamond coatings by microwave plasma-assisted chemical vapor (CVD) is the main subject this paper. plasma excited in a hydrogen-rich methane and hydrogen mixture with substrate temperature approximately 1000 °C. High reactivity limits application CVD process to certain substrates. Autoepitaxy on substrates has already been demonstrated, but nucleation non-diamond creates many conceptual practical problems. Experimental observations various are presented discussed. Several phenomena connected growth mechanism diamond: competition between graphite, surface activity species, adsorption desorption reconstruction. In turn, collective interaction plasma, growing bulk expected be responsible for observed maximum rate at °C narrowing other parameters. These delicately balanced interactions provide conditions relatively perfect films. issue how achieve high diamond. One approach catalytic which an intermediary role played some atoms such as boron, silicon, titanium others. Growth films may reach rates up 20 μm h -1 .