作者: J.J. Yao , S.C. Arney , N.C. MacDonald
DOI: 10.1109/84.128051
关键词:
摘要: The authors have developed an integrated silicon process that uses suspended single crystal (SCS) structures to fabricate x-y capacitive translators and high aspect ratio conical tips for scanned probe devices. nanomechanical device design the sequence include methods form tunneling tip pairs produce electrical isolation, contacts, conductors. Each occupies a nominal area of 40 mu m*40 m. These devices novel self-aligned tip-above-a-tip structure defined by electron beam lithography thermal oxidation silicon. maximum displacement +or-200 nm applied voltage 55 V. low mass (2*10/sup -13/ kg), rigid has measured fundamental mechanical resonant frequency 5 MHz. >