A simply constructed lead phthalocyanine memory diode
作者： Biswanath Mukherjee , Asim K. Ray , Ashwani K. Sharma , Michael J. Cook , Isabelle Chambrier
DOI: 10.1063/1.2903061
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摘要: Random-access memory switches were fabricated by using 70 nm thick spun films of nonperipherally octahexyl substituted lead phthalocyanine (PbPc) molecules sandwiched between indium tin oxide (ITO) substrates and vacuum-deposited aluminum (Al) top electrodes. The reproducible hysteresis behavior in terms high low conductance states was observed the current-voltage characteristics recorded for device at room temperature, on/off ratio this single layered estimated to be as large 103. bistable electrical switching effects attributed existence depletion layer ITO/PbPc energetically exponential distribution energy traps nonactive region PbPc films.
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