Low-Temperature Crystallization of Sol-Gel Derived PbZr0.52Ti0.48O3 Thin Films with a Vanadium Additive
作者： Min-Gyu Kang , Seung-Min Oh , Kwang-Hwan Cho , Young-Ho Do , Dong-Soo Paik
DOI: 10.1149/2.018201JES
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摘要: Low-temperature-crystallized PbZr 0.52 Ti 0.48 O 3 (PZT) thin films, prepared using a sol-gel method, with vanadium additive are demonstrated. The low crystallization and melting temperatures of oxide helped to reduce the temperature, improved grain growth in PZT films. Perovskite films were obtained at annealing temperature 450°C, remarkable electrical properties such as remnant polarization 4.3 μC/cm 2 , coercive field 49.3 kV/cm, dielectric constant 585 1 MHz, loss 0.022 tunability 64.5% observed. present results suggest that these low-temperature-crystallized could be used for integrated ferroelectric device applications.
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