作者: I.O. Usov , S. Rubanov , J. Won , A.A. Suvorova
DOI: 10.1016/J.NIMB.2013.10.081
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摘要: Abstract In this work, we present the effect of extremely high fluence ion implantation on microstructure single crystalline YSZ samples with three major low index orientations: (1 0 0), (1 1 0) and (1 1 1). The were implanted at room temperature 150 keV Ar + ions to a 1 × 10 17 Ar/cm −2 corresponding peak damage level ∼120 dpa atom concentration ∼12 at.%. Rutherford backscattering/channeling spectrometry (RBS/C), scanning electron microscopy (SEM), transmission (TEM) associated analytical tools used determine orientation dependent damage, surface morphology, modifications layers. resulted in formation severely damaged layers, which however remained crystalline. maximum, determined by RBS/C, indicated that fourth accumulation stage, previously predicted for Ar-implanted YSZ, was achieved. oriented demonstrated slightly better radiation tolerance, as observed compared other orientations. Microstructural studies revealed large cavities aligned parallel specimen surface, emerged form circular blisters surface. origin related segregation atoms into pressurized gas filled bubbles. crystallographic anisotropy microstructural parameters (thickness damages layer, blister density diameter, cavity dimensions) remains uncertain.