Predicted performance of Franz-Keldysh effect optical reflection modulators and comparisons with similar multiple quantum well-based devices

摘要: In the paper electroabsorption and electrorefraction spectra are calculated for GaAs, InGaAsP InGaAs. These compared both with experimental results data from literature giving very good agreement. From these calculations behaviour of simple reflection modulators operating at 885 nm, 1.32 mu m 1.76 is quantified a 3 dB insertion loss. This produces contrasts (on:off) approximately -30 V bias all three semiconductors above. By using Fabry-Perot cavity formed by end faces modulator devices shown to increase 20 GaAs InGaAsP, 6.9 InGaAs same bias. potential performance multiple quantum well which also make use effects.