A 4-kV/2-A/5-kHz Compact Modulator for Nitrogen Plasma Ion Implantation
作者： J.O. Rossi , J.J. Barroso , M. Ueda , G. da Silva
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摘要: To treat stainless-steel surfaces by nitrogen plasma implantation, a solid-state compact modulator was devised, in which 8.0-muF capacitor discharges through forward converter composed of low-blocking-voltage insulated-gate-bipolar-transistor switch (1.0 kV) and three step-up pulse transformers, rather than employing hard-tube devices such as conventional ion implantation pulsers, are expensive cumbersome. For this, built to produce pulses with amplitudes the order 4 kV, duration about 5.0 mus, rise time ~1.0 mus maximum current/frequencies capabilities 2.0 A 5 kHz, respectively
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