Generation of high voltage pulses for PBII devices

摘要: This report is devoted to the generation of high voltage pulses which can be used in order run plasma-based ion implantation devices. We consider circuitry pulse creation with different energy storages and various kinds switches, as thyratrons combination forming networks, hard tube switches IGBT-switches. During last 10 years circuits inductive storage semiconductor opening (SOS) have been developed. give a detailed overview on their ability produce polarity amplitudes up hundreds kV, current values kA, duration nanoseconds frequencies kHz average output power tens kW. parameters make application supplies for devices favourable. In section, modulation based grid-controlled extraction electrons from plasma described. It shown that such kind modulator could integrated into device implantation.